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200613-The high -temperature oxidation of silicon carbide and chemically vapor melting oxide which either flows and covers the exposed carbon su
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The bond energy of Si -C is generally considered to be lower than that of the C-C, so a simple explanation is that diamond has a stronger bond
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1. A method for manufacturing a silicon carbide single crystal, comprisingIn addition, a high melting point metal, or a compound such as a
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The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection