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The heating temperature of the silicon carbide sublimation growth crucible is changed by adjusting the output power of the medium frequency induction coil,

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has become the core device of power-switching converters with its excellent

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Abstract— This paper reports DFT calculations of the electron density in pure and imperfect silicon carbide clusters. The local levels produced in the band

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Speciation of aluminium in silicon carbide by electrothermal

(ETV-ICP-AES) method was developed for rapid determination of binder and lattice phase aluminium in liquid-phase sintered silicon carbide (LPS-SiC)

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A study of electroless copper–phosphorus coatings with the addition of silicon carbide (SiC) and graphite (C g) particles Article in Surface and Coatings

Short-Circuit Capability Exploration of Silicon Carbide Devices

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