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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK
Structural changes in the surface layers of self-bound silicon carbide in high-temperature friction doi:10.1007//p>
Two-dimensional silicon carbide (2D-SiC) has attracted incredible research attention recently because of its wide bandgap and high exciton binding
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Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Casey, M. CWilcox, E. PKim, HakTopper, A. DLauenstein, J.-M., et
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