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Properties of Alumina/Silicon Carbide Nanocomposite via Multi-step Sintering M Iran 2- Materials and Energy Research Center Abstract In current work,

Electronics | Free Full-Text | Towards Silicon Carbide VLSI

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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Structural changes in the surface layers of self-bound silicon carbide in high-temperature friction doi:10.1007//p>

electronic structure of two-dimensional silicon carbide |

Two-dimensional silicon carbide (2D-SiC) has attracted incredible research attention recently because of its wide bandgap and high exciton binding

US6214108B1 - Method of manufacturing silicon carbide single

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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mobility measurements of graphene on silicon carbide |

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Design and Manufacturing of 1200V SiC JBS Diodes with Low On-

This paper presents the design and fabrication of 1200V-rated SiC JBS diodes in a manufacturing environment. Various designs of p+-grids and edge

of the Cree C4D40120D Commercial 1200V Silicon Carbide

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- Method for growing single crystal of silicon carbide -

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

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The role of silicon carbide particles in stabilizing aluminum

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COMPOSITE REINFORCED WITH NANOPARTICLE SILICON CARBIDE BY

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METHOD FOR PREPARING SILICON NANOCOMPOSITE DISPERSION USING

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