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Surface of (a) aluminum substrate and (b) silicon carbide

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Silicon carbide (SiC) nanoparticles were surface modified using a silane coupling agent, and their properties were characterized using Fourier

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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and oxidation of silicon carbide on the nitride bond in

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Grinding of Chemical Vapor Deposited Silicon Carbide for X

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temperature ferromagnetism in Mn-doped silicon carbide

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Nanoparticles into Biomass‐Derived Silicon Oxycarbides

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Cree Selected as Silicon Carbide Partner for the Volkswagen

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