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(1) The unified estimation method can be applied to the strength evaluation of silicon impregnated silicon carbide at 1100°C, 1200°C and
Abstract Silicon carbide (SiC), in bulk or film form, has been shown as a promising material to replace the silicon as sensing element in devices for
HomeMaterials Science ForumSilicon Carbide and Related Materials 2017Effect of Negative Gate Bias on Single PulseEffect of Negative Gate Bias on Single
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Structural changes in the surface layers of self-bound silicon carbide in high-temperature friction doi:10.1007//p>
M1104 Effects of particle content rate and particle size on the tribological properties of magnesium composite material reinforced silicon carbide particle
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2019517-The global silicon carbide market size is Asia Pacific, especially India and China, is Europe Home Diagnostics Market Driven by Bur
Press release - Global Info Research - Silicon Carbide (SiC) Semiconductor Devices Market to Witness Robust Expansion by 2023 - published on
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Amorphous silicon carbide (a-SiC) thin films have been grown on aluminum nitride (AlN) intermediate layers on (100) Si substrates by RF magnetron
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Showing all editions for Silicon carbide : a high temperature semiconductor WorldCat: Home | About | Help | Search Legal: Copyright © 2001-2019
Mechanical Seal ; Seal ; Pump Parts ; Mechanical Seal Component ; Silicon Carbide ; Tungsten Carbide; The material includes Silicon Carbide, Tungsten Car
Influence of structure on the mechanical properties of reaction sintered silicon carbide materials doi:10.1007//p>
The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection
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HomeMaterials Science ForumSilicon Carbide and Related Materials 2017Understanding the Chemistry in Silicon CarbideUnderstanding the Chemistry in Silicon
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Silicon carbide: Nanowires clean themselvesdoi:10.1038/asiamat.2009.211《Npg Asia Materials》
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