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Process for producing silicon carbide single crystals

The process for producing silicon carbide single crystals of the present invention comprises a step for growing single crystals of silicon carbide on a

FOR FABRICATING ARTICLES MADE OF CARBON-SILICON CARBIDE

(54) SILICON CARBIDE MONOCRYSTAL GROWTH ZÜCHTUNG VON SILIZIUMKARBID EINKRISTALLEN PROCEDE DE CROISSANCE DE MONOCRISTAL DE CARBURE DE SILICIUM (84)

FOR FABRICATING ARTICLES MADE OF CARBON-SILICON CARBIDE

(54) SILICON CARBIDE MONOCRYSTAL GROWTH ZÜCHTUNG VON SILIZIUMKARBID EINKRISTALLEN PROCEDE DE CROISSANCE DE MONOCRISTAL DE CARBURE DE SILICIUM (84)

and for producing cristalline silicium, hydrogen, silicon

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Micropipes in silicon carbide crystals

describing the interaction and transformations of micropipes – dislocated cylindrical pores – in growing bulk crystals of silicon carbide

【PDF】(54) SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER

(54) SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER SILICIUMCARBID-EINKRISTALL UND -EINKRISTALLWAFER MONOCRISTAL DE CARBURE DE SILICIUM ET TRANCHE

FOR FABRICATING ARTICLES MADE OF CARBON-SILICON CARBIDE

(54) SILICON CARBIDE MONOCRYSTAL GROWTH ZÜCHTUNG VON SILIZIUMKARBID EINKRISTALLEN PROCEDE DE CROISSANCE DE MONOCRISTAL DE CARBURE DE SILICIUM (84)

【PDF】(54) SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER

(54) SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER SILICIUMCARBID-EINKRISTALL UND -EINKRISTALLWAFER MONOCRISTAL DE CARBURE DE SILICIUM ET TRANCHE

GROWTH OF COLORLESS SILICON CARBIDE CRYSTALS

Abstract not available for EP0879305Abstract of corresponding document:Large single crystals of silicon carbide are grown in a furnace sublimation system. The

Dislocations in Silicon Carbide Crystals: Interferometric and

The various silicon carbide crystals can be divided into the following categories by expressing the relationship between the step height of the growth spirals

【PDF】(54) SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER

(54) SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER SILICIUMCARBID-EINKRISTALL UND -EINKRISTALLWAFER MONOCRISTAL DE CARBURE DE SILICIUM ET TRANCHE

and for producing cristalline silicium, hydrogen, silicon

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Imperfections in Solution‐Grown β‐Silicon Carbide Crystals

Imperfections in high‐purity β‐silicon carbide crystal platelets, (111) habit, were studied using Lang x‐ray topography, Weissenberg photographs, and

2015 : XIII International Conference on Silicon Carbide

DENSE POLYCRISTALLINE BETA-SILICON CARBIDE

DENSE POLYCRISTALLINE BETA-SILICON CARBIDE ARTICLES AND PROCESS FOR THEIR PRODUCTION BY HOT PRESSINGThe invention relates to dense shaped articles of

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silicon carbide thermocouple protection tube - quality

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Relaxation phenomena in β silicon carbide single crystals

Relaxation phenomena in β silicon carbide single crystals doi:10.1007/ A. KravetsK

METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS

Growth of silicon carbide single crystals on silicon carbide seed crystals is promoted by depositing a solid carbonaceous substance on the surface of the

Production of bulk single crystals of silicon carbide

Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a

INSULATING RESISTIVITY IN HIGH PURITY SILICON CARBIDE

The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defects to a temperature that thermodynamically

Characterization of Defects in Silicon Carbide Crystals by

Copyright (to be inserted by the publisher) The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry

silicon carbide thermocouple protection tube - quality

Quality silicon carbide thermocouple protection tube for sale from silicon carbide thermocouple protection tube suppliers - 437 silicon carbide thermocouple

and for producing cristalline silicium, hydrogen, silicon

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ELECTRONIC PROPERTIES OF N-TYPE β-SILICON CARBIDE CRYSTALS

ELECTRONIC PROPERTIES OF N-TYPE β-SILICON CARBIDE CRYSTALS GROWN FROM SOLUTIONdoi:10.1016/B978-0-08-006768-1.50038-3Hall and resistivity measurements

in Solution#x2010;Grown #x3b2;#x2010;Silicon Carbide

Imperfections in high-purity -silicon carbide crystal platelets, (111) habit, were studied using Lang x-ray topography, Weissenberg photographs, and etch