Modification of surface of silicon carbide by sol-gel coating: Y.L. Liu, B. Kindl (Riso National Laboratory, Denmark)doi:10.1080/10412905.2005.9699001
Frants von Platen-Hallermunds 7 research works with 69 citations and 362 reads, including: The association between fluoride in drinking water and dental
Frants von Platen-Hallermunds 7 research works with 69 citations and 362 reads, including: The association between fluoride in drinking water and dental
201625- on the microstructure, stability and oxidation of macroporous silicon carbide and Environmental Technology, University of Southern Denma
Baldeaux, J., Chan, L., Platen, E.: Derivatives on realized variance 6. Quant Models Development, Danske Bank, Denmark 7. Finance
Modification of surface of silicon carbide by sol-gel coating: Y.L. Liu, B. Kindl (Riso National Laboratory, Denmark)doi:10.1016/0026-0657(93)91712
(ISVD) - Copenhagen, Denmark (2009.06.23-2009.06.26)] 2009 Sixth Jones, Bernard J.T.Platen, ErwinAragon-Calvo, Miguel A
Master Thesis, s011373 Flow in micro porous silicon carbideii Flow in Department of Micro and Nanotechnology, Technical University of Denmark,
association between fluoride in drinking water and dental caries in Danish Kirkeskov L, Kristiansen E, Bøggild H, von Platen-Hallermund F, Sc
Denmark, Norway, and Sweden and a western group, the Faeroe Islands , HCLiteraturwissenschaftGattungen u. MethodenEdgar Platen
2014104- is multiple orders of magnitude higher than that of silicon carbide (downternational A/S, Denmark for access to their high tem- perature
Circuit mismatch influence on performance of paralleling silicon carbide MOSFETsDepartment of Energy Technology, Aalborg University, DenmarkCam Pham
Immobilization of alcohol dehydrogenase on ceramic silicon carbide membranes for of Chemical and Biochemical Engineering Technical University of Denmark Kg
US1864608 * 193081 1932628 Platen Munters Refrig Syst Ab US2872790 * 195628 1959210 Denmark Herbert H Refrigerator
A silicon carbide etching process, including: forming a plasma from an HCl gas; and exposing a surface of silicon carbide to the plasma to etch the