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MONOCRYSTALLINE SILICON CARBIDE WAFERS PROCESSINGdoi:10.15507/0236-2910.025.201504.037The effect of slurry composition and wafer flatness on a material

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MONOCRYSTALLINE SILICON CARBIDE WAFERS PROCESSINGdoi:10.15507/0236-2910.025.201504.037The effect of slurry composition and wafer flatness on a material

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The present invention addresses the problem of producing, with good reproducibility, epitaxial silicon carbide wafers having high-quality silicon carbide sing

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