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4H Semi-Insulating Silicon Carbide for Radiation Detector

Characterization of 4H Semi-Insulating Silicon Carbide for Radiation Detector Applications Nuclear Science Symposium and Medical Imaging Conference (2010) p

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Radiation Resistance of Silicon Carbide Schottky Diode

neutron radiation and show better radiation resistance than silicon SiC detector composited by high-quality lightly doped epitaxial 4H-SiC

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- using silicon carbide photodiode as radiation detector

System for carrying out the process includes a radiation detector in the form of a photodiode with a silicon carbide substrate (2) on which is

4H semi-insulating silicon carbide for radiation detector

IEEE Xplore. Delivering full text access to the worlds highest quality technical literature in engineering and technology. Raman spectroscopy show the hig

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of 4H silicon carbide semiconductor radiation detectors

The fast neutron response of 4H silicon carbide semiconductor radiation neutron reactions with the silicon and carbon nuclides in the SiC detector

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conductive Silicon Carbide in micro EDM operation

the performance characteristics of conductive Silicon Carbide in micro EDM (Courtesy: IIT Mumbai) to obtain the temperature distribution in tool and

Beta-radiation detector based on field effect tube structure

The invention discloses a beta-radiation detector based on a field effect tube structure of a silicon carbide metal semiconductor, which mainly solves the

Study on silicon carbide radiation detectors for laser-plasma

Silicon Carbide (SiC) detectors for photons and especially for laser-generated plasma radiation SiC detector and 0.8 ns risetime and 1 ns

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Silicon Carbide Radiation Detectors: - PDF

INFN Commissione V Firenze, 9 Febbraio 2010 Silicon Carbide Radiation Detectors: research activity, status and perspectives Giuseppe Bertuccio Dipartimento di

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Development of a Silicon Carbide Radiation Detector - INSPIRE

The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested

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