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10. A silicon carbide single crystal wafer obtained by processing and Further, in recent years, demand for SiC single crystal as a substrate
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2019516-IEC63068-Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxial
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Descriptors Silicon carbide, Defects, Integrated circuit technology, Semiconductor devices, Electronic equipment and components ICS 31.080.99