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in epitaxial graphene on a silicon carbide substrate:

The graphene formed on the silicon face of a 4H silicon carbide substrate was photolithographically patterned into isolated active regions for the semi

Silicon carbide substrate

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

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A silicon carbide substrate, which allows for reduced resistivity in the thickness direction thereof while restraining stacking faults from being produced due

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Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(

The GaN/SiC/Si(111) structure is formed on a Si substrate with (111) heterointerface is caused by the formation of a thin silicon-

structures in the silicon carbide substrates by plasma-

pA survey dealing with the technology of the formation of three-dimensional structures in silicon carbide substrates is presented. As for technology,

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30122579 Silicon Carbide

20111020-30122579 Silicon Carbide - Download as PDF File (.pdf), Text file (.txt) or read online. SILICON CARBIDE 1. Introduction Silicon carbide

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Simulation of Substrate Temperature Distribution in Diamond

Download Citation on ResearchGate | On Dec 6, 2007, Wei Zuo and others published Simulation of Substrate Temperature Distribution in Diamond Films Growth

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Computed reflectance of FEG/MEG on the SiC substrate for

Download scientific diagram | Computed reflectance of FEG/MEG on the SiC substrate for varying the Fermi level E F (a), the carrier scattering time τ

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(ALD) of conformal titanium aluminum carbide (TiAlC) films that exhibit The substrate 100 can include a semiconductor substrate, such as a silicon

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A silicon carbide substrate (1) comprises a base substrate (10) having a diameter of 70 mm or more and single crystal silicon carbide, and is

REMOVAL OF DEFECT IN SILICON CARBIDE SUBSTRATE

SOLUTION: In a SiC semiconductor substrate bearing epitaxial layers 2, 3, a resist 13 is formed on the surface of the p-type epitaxial layer 3 in

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A first silicon carbide substrate (11) has a first backside surface (B1) connected to a supporting portion (30), a first front-side surface (T1)

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SILICON CARBIDE SUBSTRATE

Provided is a silicon carbide substrate fulfilling the following: the plane defect density (N1) exposed at a first surface is less than the plane defect