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of High-purity Semi-insulating 4H-SiC Crystal via the PVT

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Analysis of polytype stability in PVT grown silicon carbide

Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are

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Graphite for High Quality SiC Crystal Growth by PVT Method

The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method

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