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228. Self-Potential in Long Wire Resistors. 229. Tungsten Carbide Gravitolow at 6-7 AM and high at 6-8 PM, could this be ground temperature?
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200553-A method for bonding an electrically conductive silicon carbide structure to an electrically conductive siliconized silicon carbide structur
200143-A method for forming a thin-film resistor, which is composed of silicon, carbon, and chromium, is disclosed. The resistivity of the thin-fil
2003717-A method for bonding an electrically conductive silicon carbide structure to an electrically conductive siliconized silicon carbide structur
228. Self-Potential in Long Wire Resistors. 229. Tungsten Carbide Gravitolow at 6-7 AM and high at 6-8 PM, could this be ground temperature?
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A method of making an electric resistor having a negative temperature coefficient of resistance whose resistance body consists of p-type doped pyrolytic
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DURING the pastk dejfKde, resistors having silicon carbide again and characterized by a striking law-the current passed Aing proportional to the fourth
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